1200V XPT Gen4 Trench Discrete IGBT
Reducing the thermal resistance RthJC can simplify thermal design.
The "1200V XPT Gen4 Trench Discrete IGBT" is a new Gen4 IGBT optimized for low, medium, and high-speed switching applications. These 1200V devices, equipped with XPT thin wafer technology and the fourth-generation trench IGBT process, contribute to reducing gate drive requirements and conduction losses. They also feature low thermal resistance, low losses, and high current density. Furthermore, the positive temperature coefficient of the collector-emitter voltage allows for the parallel use of multiple devices. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of each application. - Reduces gate driver requirements due to decreased gate charge Qg. - Facilitates parallel use due to the positive VCE(SAT) temperature coefficient. - High power density with a maximum collector current capability of 140A at TC = 110°C. - Simplifies thermal design by reducing thermal resistance RthJC. *For more details, please download the PDF or feel free to contact us.
- Company：Littelfuse ジャパン
- Price：Other
